Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20(2)over-bar1} GaN Substrates

被引：165

作者：

Yoshizumi, Yusuke ^{[1
]}

Adachi, Masahiro ^{[1
]}

Enya, Yohei ^{[1
]}

Kyono, Takashi ^{[1
]}

Tokuyama, Shinji ^{[1
]}

Sumitomo, Takamichi ^{[1
]}

Akita, Katsushi ^{[1
]}

Ikegami, Takatoshi ^{[1
]}

Ueno, Masaki ^{[1
]}

Katayama, Koji ^{[1
]}

Nakamura, Takao ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 09期

关键词：

D O I：

10.1143/APEX.2.092101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature continuous-wave operation of 520 nm InGa-based green laser diodes on semi-polar {20 (2) over bar1} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm(2) and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {20 (2) over bar1} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 18 条

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