In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM

被引:1
|
作者
Huang, Jun-Ying [1 ]
Syu, Jing-Lin [2 ]
Tsou, Yao-Tung [2 ]
Kuo, Sy-Yen [1 ]
Chang, Ching-Ray [3 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Feng Chia Univ, Dept Commun Engn, Taichung 407, Taiwan
[3] Chung Yuan Christian Univ, Quantum Informat Ctr, Taoyuan 320, Taiwan
关键词
convolution neural network; computing in memory; processing in memory; distributed arithmetic; MRAM; SOT-MRAM; ENERGY;
D O I
10.3390/electronics11081245
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Recently, numerous studies have investigated computing in-memory (CIM) architectures for neural networks to overcome memory bottlenecks. Because of its low delay, high energy efficiency, and low volatility, spin-orbit torque magnetic random access memory (SOT-MRAM) has received substantial attention. However, previous studies used calculation circuits to support complex calculations, leading to substantial energy consumption. Therefore, our research proposes a new CIM architecture with small peripheral circuits; this architecture achieved higher performance relative to other CIM architectures when processing convolution neural networks (CNNs). We included a distributed arithmetic (DA) algorithm to improve the efficiency of the CIM calculation method by reducing the excessive read/write times and execution steps of CIM-based CNN calculation circuits. Furthermore, our method also uses SOT-MRAM to increase the calculation speed and reduce power consumption. Compared with CIM-based CNN arithmetic circuits in previous studies, our method can achieve shorter clock periods and reduce read times by up to 43.3% without the need for additional circuits.
引用
收藏
页数:17
相关论文
共 50 条
  • [11] Exploring a SOT-MRAM Based In-Memory Computing for Data Processing
    He, Zhezhi
    Zhang, Yang
    Angizi, Shaahin
    Gong, Boqing
    Fan, Deliang
    IEEE TRANSACTIONS ON MULTI-SCALE COMPUTING SYSTEMS, 2018, 4 (04): : 676 - 685
  • [12] Resistive-RAM-Based In-Memory Computing for Neural Network: A Review
    Chen, Weijian
    Qi, Zhi
    Akhtar, Zahid
    Siddique, Kamran
    ELECTRONICS, 2022, 11 (22)
  • [13] Automatic Reference Current Architecture in Computing in Memory by MRAM
    Chen, Tsao-Lun
    Tseng, Wei-Tang
    PROCEEDINGS OF THE 2019 IEEE EURASIA CONFERENCE ON IOT, COMMUNICATION AND ENGINEERING (ECICE), 2019, : 86 - 88
  • [14] Multi-Objective Neural Architecture Search for In-Memory Computing
    Amin, Md Hasibul
    Mohammadi, Mohammadreza
    Zand, Ramtin
    2024 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, ISVLSI, 2024, : 343 - 348
  • [15] CiM-BNN:Computing-in-MRAM Architecture for Stochastic Computing Based Bayesian Neural Network
    Gu, Huiyi
    Jia, Xiaotao
    Liu, Yuhao
    Yang, Jianlei
    Wang, Xueyan
    Zhang, Youguang
    Cotofana, Sorin Dan
    Zhao, Weisheng
    IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING, 2024, 12 (04) : 980 - 990
  • [16] NNPIM: A Processing In-Memory Architecture for Neural Network Acceleration
    Gupta, Saransh
    Imani, Mohsen
    Kaur, Harveen
    Rosing, Tajana Simunic
    IEEE TRANSACTIONS ON COMPUTERS, 2019, 68 (09) : 1325 - 1337
  • [17] MRAM-based In-Memory Computing for Efficient Acceleration of Generative Adversarial Networks
    Kaushik, Partha
    Gupta, Avi
    Nehete, Hemkant
    Kaushik, Brajesh Kumar
    2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO, 2023, : 798 - 802
  • [18] Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey
    Yusuf, Alaba
    Adegbija, Tosiron
    Gajaria, Dhruv
    IEEE ACCESS, 2024, 12 : 28036 - 28056
  • [19] A STT-Assisted SOT MRAM-Based In-Memory Booth Multiplier for Neural Network Applications
    Wu, Jiayao
    Wang, Yijiao
    Wang, Pengxu
    Wang, Yiming
    Zhao, Weisheng
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2024, 23 : 29 - 34
  • [20] An Adaptive Read Control Voltage Scheme for Reliability Enhancement of Flash-Based In-Memory Computing Architecture for Neural Network
    Zhang, Xinrui
    Huang, Jian
    Liu, Xianping
    Zhong, Baiqing
    Yu, Zhiyi
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (03) : 422 - 427