Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy

被引：19

作者：

Henry, A ^{[1
]}

Ellison, A

Forsberg, U

Magnusson, B

Pozina, G

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[2] Okmet AB, SE-58330 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

doping; photoluminescence; polytypes;

D O I：

10.4028/www.scientific.net/MSF.389-393.593

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We are using low temperature photoluminescence (LTPL) to evaluate the quality of SiC wafers and are able to characterize up to 2 inch diameter wafers (with or without epilayers) at low temperature (2K). Polytype maps for bulk material can be drawn, as well as nitrogen concentration maps for both bulk and epilayer wafers in the very large doping range available today (from low 10(14) cm(-3) to 10(19) cm(-3)).

引用

页码：593 / 596

页数：4

共 4 条

[1] Photoluminescence study of CVD layers highly doped with nitrogen [J].

Forsberg, U ;

Henry, A ;

Linnarsson, MK ;

Janzén, E .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :619-622

[2] Photoluminescence of 4H-SiC:: some remarks [J].

Henry, A ;

Ivanov, IG ;

Ellison, A ;

Janzén, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :234-238

[3] Nitrogen doping concentration as determined by photoluminescence in 4H- and 6H-SiC [J].

Ivanov, IG ;

Hallin, C ;

Henry, A ;

Kordina, O ;

Janzen, E .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3504-3508

[4] Material characterization need for SiC-based devices [J].

Janzén, E ;

Henry, A ;

Bergman, JP ;

Ellison, A ;

Magnusson, B .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) :181-186

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