Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin films

被引：8

作者：

Lee, EG ^{[1
]}

Lee, JK

Kim, JY

Lee, JG

Jang, HM

Kim, SJ

机构：

[1] Chosun Univ, Dept Mat Engn, Factory Automat Res Ctr Parts Vehicles, Kwangju 501759, South Korea

[2] Kookmin Univ, Dept Met Engn, Seoul 136702, South Korea

[3] Pohang Univ, Dept Mat Engn, Pohang 790784, South Korea

[4] Korea Atom Energy Res Inst, Adv Nucl Mat Dev Team, Taejon 305353, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1999年 / 18卷 / 24期

关键词：

D O I：

10.1023/A:1006797421070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deformation in the hysteresis loop of Pt/lead zirconate titanate (PZT)/Pt thin film capacitors was studied as a function of Zr/Ti ratios ranging from 60/40 to 20/80. The capacitors prepared by sputtering and reactive ion etching (RIE) of the top Pt layer were positively poled by d.c. plasma potential during RIE of Pt. Deformations in the hysteresis loop such as a voltage shift, slant, and constriction were found to be due to space charges trapped at domain boundaries. Top electrode annealing below the Curie temperature accelerated the aging process. Trapped charges at domain boundaries were very stable and remained after annealing above the Curie temperature for 10 min.

引用

页码：2025 / 2028

页数：4

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