Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs

被引：29

作者：

Wang, Lei ^{[1
,2
,3
]}

Wang, Jun ^{[1
,2
,3
]}

Gao, Chao ^{[1
,2
,3
]}

Hu, Jian ^{[3
]}

Li, Paul ^{[3
]}

Li, Wenjun ^{[3
]}

Yang, Steve H. Y. ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 03期

关键词：

Drain-extended MOS (DEMOS); impact ionization; Kirk effect; quasi-saturation; MODEL; TRANSISTORS; CIRCUIT; DESIGN; ANALOG;

D O I：

10.1109/TED.2008.2011575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a physical description of two specific aspects in drain-extended MOS transistors, i.e., quasi-saturation and impact-ionization effects. The 2-D device simulator Medici provides the physical insights, and both the unique features are originally attributed to the Kirk effect. The transistor dc model is derived from regional analysis of carrier transport in the intrinsic MOS and the drift region. The substrate-current equations, considering extra impact-ionization factors in the drift region, are also rigorously derived. The proposed model is primarily validated by MATLAB program and exhibits excellent scalability for various transistor dimensions, drift-region doping concentration, and voltage-handling capability.

引用

页码：492 / 498

页数：7

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