Enhancement of the efficiency and stability of planar p-i-n perovskite solar cells via incorporation of an amine-modified fullerene derivative as a cathode buffer layer

被引:25
作者
Liu, Xiaodong [1 ,2 ]
Huang, Peng [1 ,2 ]
Dong, Qingqing [1 ,2 ]
Wang, Zhaowei [1 ,2 ]
Zhang, Kaicheng [1 ,2 ]
Yu, Hao [1 ,2 ]
Lei, Ming [3 ]
Zhou, Yi [1 ,2 ]
Song, Bo [1 ,2 ]
Li, Yongfang [1 ,2 ,4 ,5 ]
机构
[1] Soochow Univ, Lab Adv Optoelect Mat, Suzhou 215123, Peoples R China
[2] Soochow Univ, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China
[3] Zhejiang Univ, Dept Chem, Hangzhou 310027, Zhejiang, Peoples R China
[4] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[5] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
planar p-i-n perovskite solar cells; cathode buffer layers; amine-modified fullerene derivative; PCBDANI/LiF double CBLs; stability; OPEN-CIRCUIT VOLTAGE; LOW-TEMPERATURE; THIN-FILMS; PERFORMANCE; HYSTERESIS; CRYSTALLIZATION; EXTRACTION; BEHAVIOR; LENGTHS; OXIDE;
D O I
10.1007/s11426-016-0085-y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A methanol-soluble diamine-modified fullerene derivative (denoted as PCBDANI) was applied as an efficient cathode buffer layer (CBL) in planar p-i-n perovskite solar cells (pero-SCs) based on the CH3NH3PbI3-x Cl (x) absorber. The device with PCBDANI single CBL exhibited significantly improved performance with a power conversion efficiency (PCE) of 15.45%, which is approximately 17% higher than that of the control device without the CBL. The dramatic improvement in PCE can be attributed to the formation of an interfacial dipole at the PCBM/Al interface originating from the amine functional group and the suppression of interfacial recombination by the PCBDANI interlayer. To further improve the PCE of pero-SCs, PCBDANI/LiF double CBLs were introduced between PCBM and the top Al electrode. An impressive PCE of 15.71% was achieved, which is somewhat higher than that of the devices with LiF or PCBDANI single CBL. Besides the PCE, the long-term stability of the device with PCBDANI/LiF double CBLs is also superior to that of the device with LiF single CBL.
引用
收藏
页码:136 / 143
页数:8
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