Surface Ligand Engineering for a Lead-Free Cs3Cu2Br5 Microcrystal-Based Humidity Sensor with a Giant Response

被引:42
作者
Huang, Yanyi [1 ]
Liang, Chengyao [1 ]
Wu, Daofu [1 ]
Chang, Qijie [1 ]
Liu, Libo [1 ]
Liu, Huanbin [1 ]
Tang, Xiaosheng [1 ]
He, Yong [1 ,2 ]
Qiu, Jing [1 ]
机构
[1] Chongqing Univ, Coll Optoelect Engn, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China
[2] Chongqing Univ, State Key Lab Coal Mine Disaster Dynam & Control, Chongqing 400044, Peoples R China
基金
中国国家自然科学基金;
关键词
SENSING PROPERTIES; PEROVSKITE; FILM; EFFICIENCY; GEL;
D O I
10.1021/acs.jpclett.1c00559
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Halide perovskites are potential humidity-detection materials due to their sensitivity to water, but the instability of traditional lead-based halide perovskites and the toxicity of Pb hinder further application in humidity sensing. Here, lead-free Cs3Cu2Br5 perovskite microcrystals passivated by surface ligands (OLA and OAm) are used to prepare an environmentally friendly humidity sensor. The humidity sensing performance of the prepared sensors was tested, and the effect of surface ligands of perovskites on the performance of humidity sensors was analyzed. The results show that the impedance variations of the manufactured humidity sensors at 12 to 95% relative humidity are 10(6)Omega (OLA) and 10(5)Omega (OAm), respectively. Besides, the sensors demonstrated excellent repeatability, low hysteresis, and considerable stability at different RH values. Furthermore, the analysis of the different ligands attests that short-chain OLA is more conducive to the formation of porous films with stronger water absorption capacity, further improving the responsiveness of the sensor. By contrast, and long-chain OAm is more conducive to the formation of dense films, improving the response ability at low humidity. Additionally, the more hydrophilic OLA contributes to greater responsiveness, while the more hydrophobic OAm helps to shorten the response and recovery time.
引用
收藏
页码:3401 / 3409
页数:9
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