Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

被引：9

作者：

Auret, F. D. ^{[1
]}

Meyer, W. E. ^{[1
]}

Coelho, S. ^{[1
]}

Hayes, M. ^{[1
]}

Nel, J. M. ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 4-5期

基金：

新加坡国家研究基金会;

关键词：

germanium; defects; DLTS; annealing; electron beam deposition; COMPLEX;

D O I：

10.1016/j.mssp.2006.08.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pt Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show EBD introduces several electrically active defects at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V-Sb complex, or E-center, introduced during high-energy electron irradiation of Ge. Annealing at 325 degrees C in Ar removed all the defects introduced during EBD. (C) 2006 Elsevier Ltd. All rights reserved.

引用

页码：576 / 579

页数：4

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