Electrical characterization of graphene source/drain electrodes in amorphous indium-gallium-zinc-oxide thin-film transistors subjected to plasma treatment in contact regions

被引：3

作者：

Jeong, Jaewook ^{[1
]}

Kim, Joonwoo ^{[2
]}

机构：

[1] Chungbuk Natl Univ, Sch Informat & Commun Engn, Cheongju 28644, Chungbuk, South Korea

[2] Daegu Gyeongbuk Inst Sci & Technol, Intelligent Devices & Syst Res Grp, Daegu, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Semiconducting indium compounds - Graphene transistors - Gallium compounds - Graphite electrodes - II-VI semiconductors - Plasma applications - Zinc oxide - Thin film transistors;

D O I：

10.7567/1347-4065/ab24fe

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the electrical characteristics of a-IGZO TFTs with graphene source/drain (S/D) electrodes subjected to argon plasma treatment are analyzed. Depending on the channel length (L), the a-IGZO TFTs showed parasitic resistance dominant (L < 30 mu m) and channel conduction dominant regions (L >= 30 mu m). Using the transmission line method, the intrinsic parameters were extracted. The intrinsic field-effect mobility was about 9.79 cm(2) s(-1) and the width-normalized parasitic resistance value was about 460 Omega.cm, which are comparable with those of a-IGZO TFTs having S/D plasma-treated regions with no contact metal. Temperature-dependent measurement indicates that the graphene electrodes affected the thermally deactivated behavior of the a-IGZO TFTs, which is different from the case of a-IGZO TFTs having conventional metal electrodes. (C) 2019 The Japan Society of Applied Physics

引用

页数：6

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