Morphological phase transitions in Alq3 films

被引：11

作者：

Baldacchini, G. ^{[1
]}

Baldacchini, T. ^{[2
]}

Chiacchiaretta, P. ^{[1
]}

Pode, R. B. ^{[3
]}

Wang, Q. -M. ^{[1
]}

机构：

[1] ENEA, Dept Phys Technol & New Mat, Frascati Res Ctr, I-00044 Frascati, Rome, Italy

[2] Newport Corp, Technol & Applicat Ctr, Irvine, CA 92606 USA

[3] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

JOURNAL OF LUMINESCENCE | 2009年 / 129卷 / 12期

关键词：

Alq(3); Photoluminescence; Decay processes; Annealing processes; Phase transitions; ORGANIC ELECTROLUMINESCENT DEVICES; LIGHT-EMITTING DEVICES; PERFORMANCE; PHOTOLUMINESCENCE; TEMPERATURE; ENHANCEMENT; STABILITY; DIODES;

D O I：

10.1016/j.jlumin.2009.01.035

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thin films of tris(8-hydroxyquinoline)aluminum (Alq(3)) have been subjected to thermal processes in order to verify previous reports about improved emission efficiency upon hearing organic light-emitting diodes (OLEDs). It has been found that annealed films in various atmospheres display an abrupt variation of the intensity, peak wavelength and linewidth of the photoluminescence band between 150 and 180 degrees C, which hint at phase transition phenomena Moreover, the annealed films exhibit a much longer lifetime, which is still one of the major challenges in the OLEDs research field (C) 2009 Elsevier B.V. All rights reserved

引用

页码：1831 / 1834

页数：4

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