Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures

被引：1
|
作者：
Rong, Taotao [1 ]
Yang, Lin-An [1 ]
Zhao, Ziyue [1 ]
Yang, Lin [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 07期
基金：
中国国家自然科学基金;
关键词：
ELECTROREFLECTANCE; OSCILLATORS; NITRIDE; DEVICES; TRAPS;
D O I：
10.7567/JJAP.57.070303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The performance of resonant tunneling diodes (RTDs) based on nonpolar-oriented AlGaN/GaN heterostructures has been theoretically investigated by numerical simulation. Simulation results show that the RTDs grown along the nonpolar orientation can yield the current-voltage (I-V) characteristics with the peak current, the peak-to-valley ratio (PVCR), and the peak voltage of about 3.5 times and 1.5 times higher and 1.1 times lower than those of RTDs grown along the conventional polar orientation, respectively. The results also show excellent symmetry, high reproducibility of I-V characteristics, and high intrinsic response frequency. (C) 2018 The Japan Society of Applied Physics.
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页数：5
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