Mechanism of rectification and two-type bipolar resistance switching behaviors of Pt/Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3

被引：7

作者：

Liu, W. W. ^{[1
]}

Jia, C. H.

Zhang, Q.

Zhang, W. F.

机构：

[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475001, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 48期

基金：

中国国家自然科学基金;

关键词：

Pb(Zr; Ti)O-3; bipolar resistance switching; Schottky junction; ferroelectric polarization; PB(ZR; TI)O-3; THIN-FILMS; FERROELECTRIC MEMORIES; PT(111)/SI SUBSTRATE; HETEROSTRUCTURES;

D O I：

10.1088/0022-3727/48/48/485102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Pb(Zr0.52Ti0.48)O-3 (PZT) films have been grown on Nb:SrTiO3 (NSTO) (1 0 0) substrates. The films are a tetragonal perovskite phase with good density and homogeneity. Rectification behavior and two types of bipolar resistance switching (BRS) have been observed in the Pt/PZT/NSTO device. It exhibits rectification below 3 V. According to piezo force microscopy analysis, PZT film has a multidomain structure below 8 V and the device shows abnormal BRS between 3 V and 8 V. When the voltage increases above 8 V, the polarization of the PZT film tends to saturation and it becomes single domain and displays normal BRS behavior. In addition, the device demonstrates good retention and anti-fatigue properties. The transition from abnormal bipolar to normal bipolar behavior caused by ferroelectric polarization can broaden device applications and enable large flexibility in terms of memory architecture.

引用

页数：7

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