Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

被引：15

作者：

Detchprohm, T. ^{[1
]}

Zhu, M. ^{[1
]}

Li, Y. ^{[1
]}

Xia, Y. ^{[1
]}

Liu, L. ^{[2
]}

Hanser, D. ^{[2
]}

Wetzel, C. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; LASER-DIODES; HIGH-POWER;

D O I：

10.1016/j.jcrysgro.2009.01.060

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate homoepitaxial growth of GaInN/GaN-based green (500-560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of similar to 14% is needed for both, a- and m-plane quantum wells (QWs), while similar to 8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2937 / 2941

页数：5

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