Structural and Thermodynamic Properties of Some Defects in SnO2

被引:0
作者
Ntimane, J. N. [1 ]
Mosuang, T. E. [1 ]
Rammutla, K. E. [1 ]
机构
[1] Univ Limpopo, Dept Phys & Geol, ZA-0727 Sovenga, South Africa
来源
2013 INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND EMERGING ENGINEERING TECHNOLOGIES (ICANMEET) | 2013年
关键词
Tin-dioxide; Anatase; Rutile; Transition temperature; Thermal expansion; Specific heat; SURFACE-STRUCTURE; STATES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Different forms of tin-dioxide (SnO2) ceramic have been thoroughly studied in recent years because of its potential in sensing and fuel cells. The current findings used classical molecular dynamics simulations focused on the role of defects in tin-dioxide. The total energy of the NPT hoover ensemble at various temperatures has been calculated in order to determine the effects of oxygen vacancy and Ti substitutional defect in tin-dioxide. The results obtained suggest that Ti defect tends to lower the energy of the anatase tin-dioxide with increasing temperature. The radial distribution functions and the volume-temperature plots of the structures suggest the transformation of anatase to rutile tin-dioxide around 3000 K.
引用
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页码:286 / 289
页数:4
相关论文
共 10 条
[1]   OXYGEN VACANCIES AND DEFECT ELECTRONIC STATES ON THE SNO2(110)-1X1 SURFACE [J].
COX, DF ;
FRYBERGER, TB ;
SEMANCIK, S .
PHYSICAL REVIEW B, 1988, 38 (03) :2072-2083
[2]   THE BEHAVIOR OF TIN DIOXIDE SENSORS IN EXHAUST ENVIRONMENTS AT LOW AND INTERMEDIATE TEMPERATURES [J].
EASTWOOD, PG ;
CLAYPOLE, TC ;
WATSON, J ;
COLES, GSV .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1993, 4 (04) :524-533
[3]   A COMPUTER MODELING STUDY OF DEFECT AND DOPANT STATES IN SNO2 [J].
FREEMAN, CM ;
CATLOW, CRA .
JOURNAL OF SOLID STATE CHEMISTRY, 1990, 85 (01) :65-75
[4]   Energetic and Electronic Structure Analysis of Intrinsic Defects in SnO2 [J].
Godinho, Kate G. ;
Walsh, Aron ;
Watson, Graeme W. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (01) :439-448
[5]   Oxidation catalysts: A comparative simulation study of the lattice, defect and surface structure of the stannates ASnO(3) (A=Ca, Sr and Ba) and SnO2 [J].
Hines, RI ;
Allan, NL ;
Flavell, WR .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1996, 92 (12) :2057-2063
[7]   The surface structure of SnO2(110) (4x1) revealed by scanning tunneling microscopy [J].
Jones, FH ;
Dixon, R ;
Foord, JS ;
Egdell, RG ;
Pethica, JB .
SURFACE SCIENCE, 1997, 376 (1-3) :367-373
[8]   Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices [J].
Kim, H ;
Gilmore, CM ;
Piqué, A ;
Horwitz, JS ;
Mattoussi, H ;
Murata, H ;
Kafafi, ZH ;
Chrisey, DB .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6451-6461
[9]   Atomistic understanding of semiconductor gas sensors [J].
Lantto, V ;
Rantala, TT ;
Rantala, TS .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) :1961-1965
[10]   Computational studies for the interpretation of gas response of SnO2(110) surface [J].
Rantala, TS ;
Rantala, TT ;
Lantto, V .
SENSORS AND ACTUATORS B-CHEMICAL, 2000, 65 (1-3) :375-378