A Wideband 2x13-bit All-Digital I/Q RF-DAC

被引:112
作者
Alavi, Morteza S. [1 ]
Staszewski, Robert Bogdan [1 ]
de Vreede, Leo C. N. [1 ]
Long, John R. [1 ]
机构
[1] Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands
关键词
Balun; class-E power amplifier; digital power amplifier (DPA); digital predistortion (DPD); digital-to-RF-amplitude converter (DRAC); in-phase/quadrature-phase (I/Q) modulator; MOS switch; RF digital-to-analog converter (RF-DAC); transformer; transmitter (TX); TRANSMITTER; POWER; MODULATOR;
D O I
10.1109/TMTT.2014.2307876
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a wideband 2x13-bit in-phase/quadrature-phase (I/Q) RF digital-to-analog converter-based all-digital modulator realized in 65-nm CMOS. The isolation between I and Q paths is guaranteed employing 25% duty-cycle differential quadrature clocks. With a 1.3-V supply and an on-chip power combiner, the digital I/Q transmitter provides more than 21-dBm RF output power within a frequency range of 1.36-2.51 GHz. The peak RF output power, overall system, and drain efficiencies of the modulator are 22.8 dBm, 34%, and 42%, respectively. The measured static noise floor is below -160 dBc/Hz. The digital I/Q RF modulator demonstrates an IQ image rejection and local oscillator leakage of -65 and -68 dBc, respectively. It could be linearized using either of the two digital predistortion (DPD) approaches: a memoryless polynomial or a lookup table. Its linearity is examined using single-carrier 4/16/64/256/1024 quadrature amplitude modulation (QAM), as well as multi-carrier 256-QAM orthogonal frequency-division multiplexing baseband signals while their related modulation bandwidth can be as high as 154 MHz. Employing DPD improves the third-order intermodulation product by (IM3) by more than 25 dB, while the measured error vector magnitude for a "single-carrier 22-MHz 64-QAM" signal is better than -28 dB.
引用
收藏
页码:732 / 752
页数:21
相关论文
共 36 条
[11]  
Gaber W. M., 2012, ESSCIRC 2012 - 38th European Solid State Circuits Conference, P341, DOI 10.1109/ESSCIRC.2012.6341324
[12]  
Gaber W. M., 2011, 37th European Solid State Circuits Conference (ESSCIRC 2011), P139, DOI 10.1109/ESSCIRC.2011.6044884
[13]   A Low-Power, Low-EVM, SAW-Less WCDMA Transmitter Using Direct Quadrature Voltage Modulation [J].
He, Xin ;
van Sinderen, Jan .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (12) :3448-3458
[14]   A wideband ΔΣ digital-RF modulator for high data rate transmitters [J].
Jerng, Albert ;
Sodini, Charles G. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (08) :1710-1722
[15]   A DATA PREDISTORTION TECHNIQUE WITH MEMORY FOR QAM RADIO SYSTEMS [J].
KARAM, G ;
SARI, H .
IEEE TRANSACTIONS ON COMMUNICATIONS, 1991, 39 (02) :336-344
[16]   An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement [J].
Kousai, Shouhei ;
Hajimiri, Ali .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (12) :3376-3392
[17]   A 32 nm SoC With Dual Core ATOM Processor and RF WiFi Transceiver [J].
Lakdawala, Hasnain ;
Schaecher, Mark ;
Fu, Chang-Tsung ;
Limaye, Rahul ;
Duster, Jon ;
Tan, Yulin ;
Balankutty, Ajay ;
Alpman, Erkan ;
Lee, Chun C. ;
Khoa Minh Nguyen ;
Lee, Hyung-Jin ;
Ravi, Ashoke ;
Suzuki, Satoshi ;
Carlton, Brent R. ;
Kim, Hyung Seok ;
Verhelst, Marian ;
Pellerano, Stefano ;
Kim, Tong ;
Venkatesan, Satish ;
Srivastava, Durgesh ;
Vandervoorn, Peter ;
Rizk, Jad ;
Jan, Chia-Hong ;
Ramamurthy, Sunder ;
Yavatkar, Raj ;
Soumyanath, Krishnamurthy .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (01) :91-103
[18]   A 10-b, 500-MSample/s CMOS DAC in 0.6 mm2 [J].
Lin, CH ;
Bult, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :1948-1958
[19]   A 12 bit 2.9 GS/s DAC With IM3 <-60 dBc Beyond 1 GHz in 65 nm CMOS [J].
Lin, Chi-Hung ;
van der Goes, Frank M. L. ;
Westra, Jan R. ;
Mulder, Jan ;
Lin, Yu ;
Arslan, Erol ;
Ayranci, Emre ;
Liu, Xiaodong ;
Bult, Klaas .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (12) :3285-3293
[20]   Monolithic transformers for silicon RF IC design [J].
Long, JR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (09) :1368-1382