Deposition of AgGaTe2 on sapphire substrates by closed space sublimation

被引：3
作者：
Uruno, Aya [1 ]
Usui, Ayaka [1 ]
Kobayashi, Masakazu [1 ]
机构：
[1] Waseda Univ, Dept Elect Engn & Biosci, Shinjuku Ku, Tokyo 1698555, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期
关键词：
AgGaTe2; chalcopyrite; sapphire; closed space sublimation; pole figure; FILM SOLAR-CELLS; THIN-FILM; EFFICIENCY; TELLURIDE; GROWTH;
D O I：
10.1002/pssc.201300240
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AgGaTe2 layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used primarily to improve the stoichiometry of the film. Grown films were evaluated by XRD measurements. AgGaTe2 layers were grown only at low source temperature (about 780 degrees C), and to have strong preference for the (103) orientation. By using the pole figure, it is possible to study the orientation of the film, and the substrate surface arrangement has resulted in this unique relationship. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1389 / 1392
页数：4
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