Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

被引：4

作者：

Sun, Qiangjian ^{[1
,2
]}

Long, Junhua ^{[2
]}

Dai, Pan ^{[3
]}

Huang, Xinping ^{[2
]}

Nie, Shuhong ^{[4
]}

Su, Wenming ^{[4
]}

Wu, Dongying ^{[2
]}

Li, Xuefei ^{[2
]}

Lu, Jianya ^{[2
]}

Xing, Zhiwei ^{[2
]}

Yang, Wenxian ^{[2
]}

Lu, Shulong ^{[2
]}

机构：

[1] Univ Sci & Technol China, Nano Sci & Technol Inst, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Huzhou Univ, Sch Informat Engn, Huzhou 313000, Peoples R China

[4] Chinese Acad Sci, Printable Elect Res Ctr, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 08期

基金：

中国国家自然科学基金;

关键词：

silver paste; SP; GaAs; ohmic contact; specific contact resistance; SOLAR-CELLS; JUNCTION;

D O I：

10.35848/1347-4065/aba7d8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used printed electronics technology to print silver paste (SP) on n-GaAs as an electrode replacing conventional alloy electrodes to simplify the fabrication process of solar cell and to reduce cost. The linear transmission line model was used to characterize the performances of SP/semiconductor ohmic contact at different annealing temperatures. The lowest specific contact resistance between SP and n-GaAs of 1.8 x 10(-4) omega cm(2)was achieved after annealing at 560 degrees C, which indicates the appropriate annealing temperature can not only ensure the close contact of silver particles, but also reduce the barrier height of metals and semiconductors to a certain extent. On the basis of these results, n-GaAs with an SP electrode can be promisingly applied to realize highly efficient and simple-manufacturing III-V solar cells.

引用

页数：6

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