Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

被引：266
作者：
Motsnyi, VF
De Boeck, J
Das, J
Van Roy, W
Borghs, G
Goovaerts, E
Safarov, VI
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Instelling Antwerp, B-2610 Antwerp, Belgium
[3] Fac Sci Luminy, Dept Phys, GPEC, F-13288 Marseille, France
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 02期
关键词：
D O I：
10.1063/1.1491010
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III-V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED. (C) 2002 American Institute of Physics.
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页码：265 / 267
页数：3
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