Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1-xAs layer at emitter/base heterojunction

被引：10
作者：
Cheng, SY [1 ]
机构：
[1] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 07期
关键词：
potential spike; offset voltage; saturation voltage; linear-graded;
D O I：
10.1016/j.sse.2004.01.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaP/GaAs heterojunction bipolar transistor (HBT) with a continuous conduction-band structure is demonstrated and theoretically investigated. This device exhibited good performance including lower turn-on voltage, lower offset voltage and smaller collector current saturation voltage. The novel aspect of device structure design is the adoption of the compositionally linear-graded AlGaAs layer between the InGaP-emitter and GaAs-base layers. Therefore, the device studied shows better dc and ac performances than a conventional device. Consequently, this causes the substantial benefit for practical analog and digital applications especially for lower operation voltage, lower power consumption commercial and military products. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1087 / 1094
页数：8
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