Metalorganic chemical vapor deposition of aluminum oxide on Si:: Evidence of interface SiO2 formation

被引:75
作者
Chowdhuri, AR
Takoudis, CG
Klie, RF
Browning, ND
机构
[1] Univ Illinois, Dept Chem Engn MC 110, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Phys MC 273, Chicago, IL 60607 USA
关键词
D O I
10.1063/1.1483903
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of aluminum oxide were deposited on H-passivated Si(100) substrate using trimethylaluminum and oxygen at 0.5 Torr and 300 degreesC. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate phase at the film-substrate interface. The O/Al ratio in the deposited film was found to be higher than that in stoichiometric Al2O3. On annealing the as-deposited samples in Ar at 900 degreesC, an absorption peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the FTIR spectra. A combination of Z-contrast imaging and electron energy-loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Our results suggest that excess oxygen present in the deposited film reacts with the underlying Si substrate and forms silicon oxide. (C) 2002 American Institute of Physics.
引用
收藏
页码:4241 / 4243
页数:3
相关论文
共 28 条
[1]   Matrix isolation investigation of the reaction of (CH3)3Al with O2 [J].
Ault, BS .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1999, 572 (02) :169-175
[2]   SIMULTANEOUS STEM IMAGING AND ELECTRON-ENERGY-LOSS SPECTROSCOPY WITH ATOMIC-COLUMN SENSITIVITY [J].
BATSON, PE .
NATURE, 1993, 366 (6457) :727-728
[3]   ATOMIC-RESOLUTION CHEMICAL-ANALYSIS USING A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE [J].
BROWNING, ND ;
CHISHOLM, MF ;
PENNYCOOK, SJ .
NATURE, 1993, 366 (6451) :143-146
[4]   Characterization and adhesion study of thin alumina coatings sputtered on PFT [J].
Cueff, R ;
Baud, G ;
Benmalek, M ;
Besse, JP ;
Butruille, JR ;
Dunlop, HM ;
Jacquet, M .
THIN SOLID FILMS, 1995, 270 (1-2) :230-236
[5]   Rapid thermal oxidation of silicon in ozone [J].
Cui, ZJ ;
Madsen, JM ;
Takoudis, CG .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8181-8186
[6]  
Egerton R.F., 2011, Electron Energy-loss Spectroscopy in the Electron Microscope, Vthird, DOI DOI 10.1007/978-1-4419-9583-4
[7]   High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition [J].
Guha, S ;
Cartier, E ;
Bojarczuk, NA ;
Bruley, J ;
Gignac, L ;
Karasinski, J .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :512-514
[8]   High-resolution depth profiling in ultrathin Al2O3 films on Si [J].
Gusev, EP ;
Copel, M ;
Cartier, E ;
Baumvol, IJR ;
Krug, C ;
Gribelyuk, MA .
APPLIED PHYSICS LETTERS, 2000, 76 (02) :176-178
[9]   PROPERTIES OF ALUMINA FILMS PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
HAANAPPEL, VAC ;
VANCORBACH, HD ;
FRANSEN, T ;
GELLINGS, PJ .
SURFACE & COATINGS TECHNOLOGY, 1995, 72 (1-2) :13-22
[10]   Study of the interfacial structure and chemistry of CVD κ-Al2O3/TiC multilayer coatings [J].
Halvarsson, M ;
Larsson, A ;
Ruppi, S .
MICRON, 2001, 32 (08) :807-815