Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

被引：440

作者：

Guo, Daoyou ^{[1
,2
]}

Wu, Zhenping ^{[1
,2
]}

Li, Peigang ^{[1
,3
]}

An, Yuehua ^{[1
,2
]}

Liu, Han ^{[3
]}

Guo, Xuncai ^{[1
,2
]}

Yan, Hui ^{[1
,2
]}

Wang, Guofeng ^{[3
]}

Sun, Changlong ^{[1
,2
]}

Li, Linghong ^{[4
]}

Tang, Weihua ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China

[4] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA

来源：

OPTICAL MATERIALS EXPRESS | 2014年 / 4卷 / 05期

基金：

中国国家自然科学基金;

关键词：

SCHOTTKY CONTACT; VISIBLE-BLIND; C-PLANE; GROWTH; NANOWIRES; EPITAXY;

D O I：

10.1364/OME.4.001067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Laser molecular beam epitaxy technology has been employed to deposit beta-gallium oxide (beta-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2) overbar01)-oriented beta-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared beta-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality beta-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.(C) 2014 Optical Society of America

引用

页码：1067 / 1076

页数：10

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