Meso scale MEMS inertial switch fabricated using an electroplated metal-on-insulator process

In this work, we report on a novel simple yet robust two-mask metal-on-insulator (MOI) process and illustrate its implementation for the fabrication of a meso scale MEMS inertial switch. The devices were fabricated of a similar to 40 mu m thick layer of nickel electrodeposited on top of a 4 mu m thick thermal field oxide (TOX) covering a single crystal silicon wafer. A 40 mu m thick layer of KMPR (R) resist was used as a mold and allowed the formation of high-aspect-ratio (1:5) metal structures. The devices were released by the sacrificial etching of the TOX layer in hydrofluoric acid. The fabricated devices were mounted in a ceramic enclosure and were characterized using both an electromagnet shaker and a drop tester. The functionality of the switch, aimed to trigger an electrical circuit when subjected to an acceleration pulse with amplitude of 300 g and duration of 200 mu s, was demonstrated experimentally and the performance targets were achieved. The experimental results were consistent with the model predictions obtained through finite element simulations.