Multi-layer ferroelectric Pb(Zr0.52Ti0.48)O3 thick films prepared by pulsed laser deposition

In pulsed laser deposition (PLD) process, using a thin PZT film as pre-nucleation layer not only markedly enhances the crystallization kinetics for PZT materials but also stabilizes the perovskite phase. Low temperature (110square200square) deposited PZT layers can be transformed into perovskite by rapid thermal annealing (RTA) at a temperature as low as 575square (1 min) and survive 650square high temperature RTA process without inducing secondary phase. Moreover, post-annealing the PZT films with intermediate thickness can release the stress of the films such that a PZT film as thick as 1.2 mu m can be obtained. Thus obtained thick PZT films possess low leakage current density (J(L) square10(-6) muA/cm(2) ) and large remanent polarization (P-r=11.8 square 12.5 mu C/cm(2) ) characteristics.