A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

被引：22

作者：

Lee, Suyoun ^{[1
]}

Jeong, Doo Seok ^{[1
]}

Jeong, Jeung-hyun ^{[1
]}

Zhe, Wu ^{[1
,2
]}

Park, Young-Wook ^{[1
,3
]}

Ahn, Hyung-Woo ^{[1
]}

Cheong, Byung-ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

antimony compounds; chalcogenide glasses; germanium compounds; hopping conduction; tellurium compounds; PHASE-CHANGE MEMORIES; AMORPHOUS-SEMICONDUCTORS; CHALCOGENIDE GLASSES; THIN-FILMS; MECHANISM;

D O I：

10.1063/1.3275756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (V-th) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (t(del)) of the threshold switching of Ge2Sb2Te5 and described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material.

引用

页数：3

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