Optical characterization of AlxGa1-xN alloys (x<0.7) grown on sapphire or silicon

被引：0

作者：

Leroux, M

Dalmasso, S

Natali, F

Helin, S

Touzi, C

Laügt, S

Passerel, M

Omnes, F

Semond, F

Massies, J

Gibart, R

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Ses Applicat, F-06560 Valbonne, France

[2] Univ Monastir, Phys Mat Lab, Monastir 5000, Tunisia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期

关键词：

D O I：

10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The optical properties of Al(x)Ga(1-x)N samples (x < 0.7) have been studied by photoluminescence (PL) and reflectivity in the 10-300 K temperature range. Various physical properties have been studied as a function of composition. such as Stokes shift, alloy broadening, exciton localization, and Huang-Rhys factor. Up to x approximate to 0.3, a band gap bowing factor of similar to0.9 eV accounts for the variation of PL and reflectivity energies. At higher compositions, luminescence energies deepen with regard to this behaviour. This is interpreted as a consequence of the Gamma(9)-Gamma(7) crossover of the valence band maxima. This is confirmed by the linear polarization of the luminescence studied under oblique observation.

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页码：887 / 891

页数：5

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