Optical characterization of AlxGa1-xN alloys (x<0.7) grown on sapphire or silicon

被引：0

作者：

Leroux, M

Dalmasso, S

Natali, F

Helin, S

Touzi, C

Laügt, S

Passerel, M

Omnes, F

Semond, F

Massies, J

Gibart, R

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Ses Applicat, F-06560 Valbonne, France

[2] Univ Monastir, Phys Mat Lab, Monastir 5000, Tunisia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期

关键词：

D O I：

10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The optical properties of Al(x)Ga(1-x)N samples (x < 0.7) have been studied by photoluminescence (PL) and reflectivity in the 10-300 K temperature range. Various physical properties have been studied as a function of composition. such as Stokes shift, alloy broadening, exciton localization, and Huang-Rhys factor. Up to x approximate to 0.3, a band gap bowing factor of similar to0.9 eV accounts for the variation of PL and reflectivity energies. At higher compositions, luminescence energies deepen with regard to this behaviour. This is interpreted as a consequence of the Gamma(9)-Gamma(7) crossover of the valence band maxima. This is confirmed by the linear polarization of the luminescence studied under oblique observation.

引用

收藏

页码：887 / 891

页数：5

相关论文

共 50 条

[21] Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry [J].

Yu, G ;

Ishikawa, H ;

Umeno, M ;

Egawa, T ;

Watanabe, J ;

Jimbo, T ;

Soga, T .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2202-2204

[22] Characterization of AlxGa1-xN layers grown by molecular beam epitaxy [J].

Kim, H ;

Andersson, TG .

PHYSICA B-CONDENSED MATTER, 2001, 308 :93-97

[23] Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42≤x<1) [J].

Taniyasu, Y ;

Kasu, M ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1255-1257

[24] Theoretical study of the AlxGa1-xN alloys [J].

de Paiva, R ;

Alves, JLA ;

Nogueira, RA ;

de Oliveira, C ;

Alves, HWL ;

Scolfaro, LMR ;

Leite, JR .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3) :2-5

[25] On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤ x ≤ 1) [J].

Nilsson, D. ;

Trinh, X. T. ;

Janzen, E. ;

Son, N. T. ;

Kakanakova-Georgieva, A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (06) :1306-1310

[26] Ultraviolet emission efficiencies of AlxGa1-xN films pseudomorphically grown on AlyGa1-yN template (x<y) with various Al-content combinations [J].

Fu, D. ;

Zhang, R. ;

Wang, B. G. ;

Liu, B. ;

Xie, Z. L. ;

Xiu, X. Q. ;

Lu, H. ;

Zheng, Y. D. ;

Edwards, G. .

THIN SOLID FILMS, 2011, 519 (22) :8013-8017

[27] Investigation of Composition-Dependent Optical Phonon Modes in AlxGa1-xN Epitaxial Layers Grown on Sapphire Substrates [J].

Chen, Jun Rong ;

Lu, Tien Chang ;

Kuo, Hao-Chung ;

Wang, Shing Chung .

COMPOUND SEMICONDUCTORS FOR ENERGY APPLICATIONS AND ENVIRONMENTAL SUSTAINABILITY, 2009, 1167 :77-+

[28] Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x<y∼0.8) [J].

Toropov, A. A. ;

Shevchenko, E. A. ;

Shubina, T. V. ;

Jmerik, V. N. ;

Nechaev, D. V. ;

Pozina, G. ;

Bergman, P. ;

Monemar, B. ;

Rouvimov, S. ;

Ivanov, S. V. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6, 2016, 13 (5-6) :232-238

[29] Dependence of field emission from AlxGa1-xN on the stoichiometric composition for x≤0.7 [J].

Chung, MS ;

Cutler, PH ;

Miskovsky, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01) :418-421

[30] Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate [J].

Bokhan, P. A. ;

Fateev, N., V ;

Malin, T., V ;

Osinnykh, I., V ;

Zakrevsky, Dm E. ;

Zhuravlev, K. S. .

JOURNAL OF LUMINESCENCE, 2018, 203 :127-134

← 1 2 3 4 5 →