Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths

被引：7

作者：

Cywinski, Grzegorz ^{[1
]}

Kudrawiec, Robert ^{[2
]}

Rzodkiewicz, Witold ^{[3
]}

Krysko, Marcin ^{[1
]}

Litwin-Staszewska, Elzbieta ^{[1
]}

Lucznik, Boleslaw ^{[1
]}

Misiewicz, Jan ^{[2
]}

Skierbiszewski, Czeslaw ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 11期

关键词：

MULTIPLE-QUANTUM WELLS; INTERSUBBAND TRANSITION; OPTICAL-PROPERTIES; MU-M; ABSORPTION; GAN; SAPPHIRE; GROWTH;

D O I：

10.1143/APEX.2.111001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the doping-induced contrast in the refractive index in GaInN/GaN-structures at telecommunication wavelengths. This contrast appears because of the plasma edge effect which has been directly observed in reflectance spectrum of GaInN:Si-layer. The refractive index has been calculated from the reflectance by using Kramers-Kronig relations and measured by ellipsometry. It has been found that the contrast between the refractive index of GaInN:Si and GaN layers equals similar to 15% at the wavelength of 1.55-mu m and the absorption coefficient is still close to zero at this wavelength. It means that GaN-based waveguides operating at 1.55-mu m can be obtained by Si-doping. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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