Persistent photoconductivity in n-type GaN

被引：0
|
作者：
Wickenden, AE
Beadie, G
Koleske, DD
Rabinovich, WS
Freitas, JA
机构：
来源：
III-V NITRIDES | 1997年 / 449卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Persistent photoconductivity has been observed in n-type Si-doped GaN grown on sapphire substrates by metalorganic vapor phase epitaxy. The effect has been seen both in films which are of electrically high quality, based on low temperature photoluminescence (PL) and Hall analysis, and in films which either appear to be compensated or which exhibit strong donor-acceptor pair recombination. The photoconductivity has been observed to persist for several days at room temperature (300K). Modeling of the resistance recovery by a stretched exponential treatment may suggest a distribution of deep level defect centers in the Si-doped GaN films.
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页码：531 / 536
页数：6
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