Twisted graphene nanoribbons as nonlinear nanoelectronic devices

被引:24
作者
Saiz-Bretin, M. [1 ]
Dominguez-Adame, E. [1 ]
Malyshev, A., V [1 ,2 ]
机构
[1] Univ Complutense, Dept Fis Mat, GISC, E-28040 Madrid, Spain
[2] Ioffe Phys Tech Inst, St Petersburg, Russia
关键词
Helical twisted graphene nanostructures; Negative differential resistance; Field-effect transistor; SUPERLATTICE PROPERTIES; THERMAL-CONDUCTIVITY; COMPLEX MATERIALS; CARBON NANOTUBES; SEMICONDUCTOR; NANOHELICES; TRANSVERSE; SIMULATIONS; PERFORMANCE; ABSORPTION;
D O I
10.1016/j.carbon.2019.04.069
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We argue that twisted graphene nanoribbons subjected to a transverse electric field can operate as a variety of nonlinear nanoelectronic devices with tunable current-voltage characteristics controlled by the transverse field. Using the density-functional tight-binding method to address the effects of mechanical strain induced by the twisting, we show that the electronic transport properties remain almost unaffected by the strain in relevant cases and propose an efficient simplified tight-binding model which gives reliable results. The transverse electric field creates a periodic electrostatic potential along the nanoribbon, resulting in a formation of a superlattice-like energy band structure and giving rise to different remarkable electronic properties. We demonstrate that if the nanoribbon geometry and operating point are selected appropriately, the system can function as a field-effect transistor or a device with nonlinear current-voltage characteristic manifesting one or several regions of negative differential resistance. The latter opens possibilities for applications such as an active element of amplifiers, generators, and new class of nanoscale devices with multiple logic states. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:587 / 593
页数:7
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