TiO2 Nanoparticles Arrays Ultraviolet-A Detector With Au Schottky Contact

被引:27
作者
Chakrabartty, Shubhro [1 ]
Mondal, Aniruddha [1 ]
Sarkar, Mitra Barun [1 ]
Choudhuri, Bijit [1 ]
Saha, Apu Kumar [2 ]
Bhattacharyya, Anirban [3 ]
机构
[1] Natl Inst Technol, Dept Elect & Commun Engn, Agartala 799055, India
[2] Natl Inst Technol, Dept Math, Agartala 799055, India
[3] Univ Calcutta, Dept Radio Phys & Elect, Kolkata 700009, India
关键词
Microscopy; nanotechnology; optical device fabrication; photoluminescence; photodetectors; Schottky diodes; PHOTODETECTOR;
D O I
10.1109/LPT.2014.2313181
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have demonstrated the synthesis of TiO2 nanoparticles (NPs) arrays on SiOx thin film using the glancing angle deposition technique. The deposited TiO2 NPs are 2-12 nm in size and have a density of similar to 2 x 10(12) cm(-2). The X-ray diffraction depicted that the TiO2 NPs are polycrystalline. An optical absorption measurement shows the maximum efficiency lies between 310 and 320 nm. The photoluminescence emission has been observed at 3.28 eV (similar to 378 nm) from TiO2 NPs. The Au/TiO2 NPs Schottky detector possesses a high ideality factor (11.4). The device has cutoff at 500 nm and maximum responsivity (0.05 A/W), external quantum efficiency (similar to 16%) at 378 nm. Under white light ON/OFF switching irradiation, the device current is increased from 1.9 to 38 nA and vice versa with a rise time of 1 s and decay time of 0.9 s.
引用
收藏
页码:1065 / 1068
页数:4
相关论文
共 26 条
[1]  
Caliskan D., 2013, J VAC SCI TECHNOL, V31, P2166
[2]   Band gap enhancement of glancing angle deposited TiO2 nanowire array [J].
Chinnamuthu, P. ;
Mondal, A. ;
Singh, N. K. ;
Dhar, J. C. ;
Chattopadhyay, K. K. ;
Bhattacharya, Sekhar .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)
[3]  
Choi W. K., 2007, NANOTECHNOLOGY, V18
[4]   Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance [J].
Church, Carena P. ;
Muthuswamy, Elayaraja ;
Zhai, Guangmei ;
Kauzlarich, Susan M. ;
Carter, Sue A. .
APPLIED PHYSICS LETTERS, 2013, 103 (22)
[5]   Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers [J].
Dalapati, GK ;
Chatterjee, S ;
Samanta, SK ;
Maiti, CK .
APPLIED SURFACE SCIENCE, 2003, 210 (3-4) :249-254
[6]  
Fu Y, 2006, CHINESE SCI BULL, V51, P1657, DOI 10.1007/S11434-006-2022-3
[7]   Influence of TiO2/electrode interface on electron transport properties in back contact dye-sensitized solar cells [J].
Fuke, Nobuhiro ;
Fukui, Atsushi ;
Islam, Ashraful ;
Komiya, Ryoichi ;
Yamanaka, Ryohsuke ;
Harima, Hiroshi ;
Han, Liyuan .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) :720-724
[8]  
Guo FW, 2012, NAT NANOTECHNOL, V7, P798, DOI [10.1038/NNANO.2012.187, 10.1038/nnano.2012.187]
[9]  
Han Y., 2010, NANOTECHNOLOGY, V21
[10]   Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode [J].
Hussain, I. ;
Soomro, M. Y. ;
Bano, N. ;
Nur, O. ;
Willander, M. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (23)