Ultrahigh-Performance Solar-Blind Photodetector Based on α-Phase-Dominated Ga2O3 Film With Record Low Dark Current of 81 fA

被引：74

作者：

Hou, Xiaohu ^{[1
]}

Sun, Haiding ^{[1
]}

Long, Shibing ^{[1
]}

Tompa, Gary S. ^{[2
]}

Salagaj, Tom ^{[2
]}

Qin, Yuan ^{[3
]}

Zhang, Zhongfang ^{[1
]}

Tan, Pengju ^{[1
]}

Yu, Shunjie ^{[1
]}

Liu, Ming ^{[3
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China

[2] Struct Mat Ind Inc, Piscataway, NJ 08854 USA

[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrat Technol, Beijing 100029, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 09期

基金：

中国国家自然科学基金;

关键词：

alpha phase-dominated; Ga2O3; MOCVD; UV photodetectors; BETA-GA2O3; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; GROWTH;

D O I：

10.1109/LED.2019.2932140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

alpha -phase-dominated Ga2O3 films were heteroepitaxially grown on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD), followed by the fabrication of ultraviolet (UV) photodetectors (PDs) with a metal-semiconductor-metal (MSM) structure using a Ti/Au metal stack as the electrode in an interdigitated geometry. The PDs possess a record low dark current of 81 fA under a bias voltage of 12 V, with a high sensitivity as confirmed by a record high photo-to-dark-current ratio exceeding 10(7) under 254 nm light illumination. Furthermore, the PDs also exhibit a high responsivity and the photoconductive gain of 11.5 A/W and 55, respectively. Most importantly, it shows an ultrahigh detectivity of 1.0 x 10(15) Jones with a quite fast response of 42 ms, paving the way for advancement of next-generation PD applications.

引用

页码：1483 / 1486

页数：4

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