Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

被引：7

作者：

Fan, Mu ^{[1
]}

Sliozberg, Kirill ^{[1
]}

La Mantia, Fabio ^{[1
,2
]}

Miyashita, Naoko ^{[3
]}

Hagymasi, Marcel ^{[3
]}

Schnitter, Christoph ^{[3
]}

Ludwig, Alfred ^{[4
,5
]}

Schuhmann, Wolfgang ^{[1
,2
,5
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, Ctr Electrochem Sci CES, D-44780 Bochum, Germany

[3] HC Starck GmbH, D-38642 Goslar, Germany

[4] Ruhr Univ Bochum, Inst Mat, D-44780 Bochum, Germany

[5] Ruhr Univ Bochum, Mat Res Dept, D-44780 Bochum, Germany

来源：

CHEMELECTROCHEM | 2014年 / 1卷 / 05期

关键词：

high-throughput screening; linear sweep voltammetry; scanning droplet cell; thin films; valve metals;

D O I：

10.1002/celc.201300153

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A binary Ta-Ti thin film composition-spread materials library is prepared through magnetron sputter co-deposition. An automated microelectrochemical investigation on selected surface areas, corresponding to a concentration gradient of Ti varying from 0.5 to 36 at %, is achieved by using a scanning droplet cell. Simultaneously, during the anodic oxide growth, a small alternating current (AC) voltage is superimposed on the in-creasing direct current (DC) potential in order to record the capacitance of the mixed-metal oxide by using alternating current linear sweep voltammetry (AC-LSV). Valve metal behavior, with the current stabilizing after an initial rapid increase, is found for all investigated compositions. AC-LSV allows the ratio of the formation factor to the relative permittivity for different compositions to be calculated.

引用

页码：903 / 908

页数：6

共 16 条

[1] Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications [J].