On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation is found, which shows that S scales approximately as the square root of the gate oxide and the SOI thickness. In addition, the authors study the impact of the SOI thickness on the variation of the threshold voltage V-th of SOI SB-MOSFETs and find a non-monotonic behavior of V-th. The results show that to avoid large threshold voltage variations and achieve high-performance devices, the gate oxide thickness should be as small as possible, and the SOI thickness should be similar to 3 nm.