Next generation 1.5 μm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers

被引：157

作者：

Roehle, H. ^{[1
]}

Dietz, R. J. B. ^{[1
]}

Hensel, H. J. ^{[1
]}

Boettcher, J. ^{[1
]}

Kuenzel, H. ^{[1
]}

Stanze, D. ^{[1
]}

Schell, M. ^{[1
]}

Sartorius, B. ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 03期

关键词：

Antennas - Ion beams - Semiconducting indium - Photoconductivity;

D O I：

10.1364/OE.18.002296

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 mu m operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity. (C) 2010 Optical Society of America

引用

页码：2296 / 2301

页数：6

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