Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

被引：30
作者：
Pelli, A.
Saarinen, K.
Tuomisto, F.
Ruffenach, S.
Briot, O.
机构：
[1] Aalto Univ, Phys Lab, FIN-02015 Helsinki, Finland
[2] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期
关键词：
D O I：
10.1063/1.2219335
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have applied a slow positron beam to study InN samples grown by metal-organic vapor-phase epitaxy with different V/III molar ratios (3300-24000) and at different growth temperatures (550-625 degrees C). Indium vacancies were identified in samples grown at V/III ratios below 4000. Their concentration is in the 10(17)cm(-3) range. No strong dependence of vacancy concentration on the molar ratio was observed. At low V/III ratios, however, In droplets and vacancy clusters are formed near the substrate interface. The elevated growth temperature enhances the In vacancy formation, possibly due to limited sticking of In on the growth surface close to the decomposition temperature. (c) 2006 American Institute of Physics.
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