12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

被引：61

作者：

Hoshi, Shinichi ^{[1
]}

Itoh, Masanori ^{[1
]}

Marui, Toshiharu ^{[1
]}

Okita, Hideyuki ^{[1
]}

Morino, Yoshiaki ^{[1
]}

Tamai, Isao ^{[1
]}

Toda, Fumihiko ^{[1
]}

Seki, Shohei ^{[1
]}

Egawa, Takashi ^{[2
]}

机构：

[1] Oki Elect Ind Co Ltd, Corp Res & Dev Ctr, Tokyo 1938550, Japan

[2] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 06期

关键词：

ALGAN/GAN HEMTS; SI SUBSTRATE; GROWTH; W/MM;

D O I：

10.1143/APEX.2.061001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the highest RF output power density of 12.88W/mm, to our knowledge, at 2.14 GHz in GaN high electron mobility transistor on silicon (Si) substrate at high voltage operation. This highest record was achieved by reducing the parasitic loss at the conductive interface layer between the epitaxial structure and the Si substrate, and thinning the Si substrate thickness. The parasitic loss evaluation by a capacitance-voltage method proved to be effective since the epitaxial wafer selection is possible without fabricating RF devices. Si substrate as thin as 60 mu m results in good thermal resistance and contributes to the large RF output power density. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 21 条

[1] AlGaN/GaN high electron mobility transistors grown on 150 mm Si(111) substrates with high uniformity [J].

Cheng, Kai ;

Leys, Maarten ;

Degroote, Stefan ;

Derluyn, Joff ;

Sijmus, Brian ;

Favia, Paola ;

Richard, Olivier ;

Bender, Hugo ;

Germain, Marianne ;

Borghs, Gustaaf .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1553-1555

[2] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[3] AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz [J].

Dumka, DC ;

Lee, C ;

Tserng, HQ ;

Saunier, P ;

Kumar, M .

ELECTRONICS LETTERS, 2004, 40 (16) :1023-1024

[4]

FANNING DM, 2005, INT C COMP SEM MAN

[5]

HOSHI S, 2007, OKI TECH REV, V211, P90

[6]

Ishikawa H, 2003, PHYS STATUS SOLIDI C, V0, P2177, DOI 10.1002/pssc.200303332

[7] 12 W/mm AlGaN-GaNHFETs on silicon substrates [J].

Johnson, JW ;

Piner, EL ;

Therrien, R ;

Rajagopal, P ;

Roberts, JC ;

Brown, JD ;

Singhal, S ;

Linthicum, KJ .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :459-461

[8]

Kaifu K., 2005, ECS T, V1, P259

[9] Highly reliable 250 WGaN high electron mobility transistor power amplifier [J].

Kikkawa, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A) :4896-4901

[10] Effects of a thermal CVD SiN passivation film on AlGaN/GaN HEMTs [J].

Marui, Toshiharu ;

Hoshi, Shinich ;

Itoh, Masanori ;

Tamai, Isao ;

Toda, Fumihiko ;

Okita, Hideyuki ;

Sano, Yoshiaki ;

Seki, Shohei .

IEICE TRANSACTIONS ON ELECTRONICS, 2008, E91C (07) :1009-1014

← 1 2 3 →