Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices

被引:4
作者
Kim, Donyoung [1 ]
Khang, Dahl-Young [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
基金
新加坡国家研究基金会;
关键词
P(VDF-TrFE); Transfer-printing; Non-volatile memory; POLY(VINYLIDENE; TRANSISTORS; BEHAVIOR; SENSORS;
D O I
10.1016/j.polymer.2014.03.054
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials. (c) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2491 / 2495
页数:5
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