Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes

被引：1

作者：

Satake, A ^{[1
]}

Tanigawa, K

Kimura, T

Fujiwara, K

Sano, N

机构：

[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan

[2] Kwansei Gakuin Univ, Nishinomiya, Hyogo 6620891, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

关键词：

D O I：

10.1063/1.1806268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of similar to0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1-xAs quantum-well regions. (C) 2004 American Institute of Physics.

引用

页码：3483 / 3485

页数：3

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