Special Important Aspects of the Thomson Effect

被引：6

作者：

Lashkevych, Igor ^{[1
]}

Velazquez, J. E. ^{[2
]}

Titov, Oleg Yu. ^{[3
]}

Gurevich, Yuri G. ^{[4
]}

机构：

[1] Inst Politecn Nacl, UPIITA, Av IPN 2580, Mexico City 07340, DF, Mexico

[2] Univ Salamanca, Dept Fis Aplicada Elect, Plaza Merced S-N,Edificio Trilingue, E-37008 Salamanca, Spain

[3] Inst Mexicano Petr, Eje Cent Lazaro Cardenas 152, Mexico City 07730, DF, Mexico

[4] IPN, CINVESTAV, Dept Fsica, Apdo 14-740, Mexico City 07000, DF, Mexico

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 06期

关键词：

Peltier effect; Thomson effect; Joule effect;

D O I：

10.1007/s11664-018-6205-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive study of the mechanisms of heating and cooling originating from an electrical current in semiconductor devices is reported. The variation in temperature associated with the Peltier effect is not related to the presence of heat sources and sinks if the heat flux is correctly determined. The Thomson effect is commonly regarded as a heat source/sink proportional to the Thomson coefficient, which is added to the Joule heating. In the present work, we will show that this formulation of the Thomson effect is not sufficiently clear. When the heat flux is correctly defined, the Thomson heat source/sink is proportional to the Seebeck coefficient. In the conditions in which the Peltier effect takes place, the temperature gradient is created, and, consequently, the Thomson effect will occur naturally.

引用

页码：3189 / 3192

页数：4

共 20 条

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