Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot

被引：37

作者：

McFarlane, J. ^{[1
]}

Dalgarno, P. A. ^{[1
]}

Gerardot, B. D. ^{[1
]}

Hadfield, R. H. ^{[1
]}

Warburton, R. J. ^{[1
]}

Karrai, K. ^{[3
]}

Badolato, A. ^{[2
]}

Petroff, P. M. ^{[2
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] LMU, Dept Phys, Ctr Nanosci, D-80539 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

excitons; gallium arsenide; III-V semiconductors; indium compounds; semiconductor quantum dots; PHOTON SOURCE; SPIN;

D O I：

10.1063/1.3086461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over similar to 1 mu s. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.

引用

页数：3

共 15 条

[1] Electrical control of spin relaxation in a quantum dot [J].