Aluminum Induced Crystallization of Amorphous Silicon Dependent on Annealing Conditions with Graphite Plate

Aluminum induced crystallization (AIC) of amorphous silicon was studied for thin-film solar cell. The AIC have been usually researched on glass substrate which has smooth surface. However, in this paper, the graphite plate was used as a substrate for using thin-film solar cell which has 1 mu m roughness. The growth silicon layer characteristic could be relatively different with that using glass substrate by the surface roughness. Therefore, the properties of crystallized silicon layer were studied for grain size analysis with variation in temperature and time during the AIC annealing process. The crystalline fraction and crystallinity was analyzed by Optical microscope, X-ray diffraction (XRD), and Raman spectrometer measurement methods. Additionally, the grain size was also relatively analyzed with FWHM results. As a result of measurements, crystalline fraction of grown silicon was increased with the increasing of temperature and time. The maximum crystalline fraction of grown silicon was 92.85% for 2400 minutes of annealing duration at 500 degrees C.