Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

被引：23

作者：

Boodhoo, L. ^{[1
]}

Crudgington, L. ^{[1
]}

Chong, H. M. H. ^{[1
]}

Tsuchiya, Y. ^{[1
]}

Moktadir, Z. ^{[1
]}

Hasegawa, T. ^{[2
]}

Mizuta, H. ^{[1
,3
]}

机构：

[1] Univ Southampton, Nano Res Grp Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[2] Natl Inst Mat Sci, Atom Elect Grp, Tsukuba, Ibaraki 3050047, Japan

[3] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tokyo, Japan

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 145卷

基金：

英国工程与自然科学研究理事会;

关键词：

NEMS; Nanowire; Narrow channel; Double suspension; Low power; CMOS compatible; LOGIC;

D O I：

10.1016/j.mee.2015.02.047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Suspended silicon nanowires with narrow (similar to 10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10(5) and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：66 / 70

页数：5

共 26 条

[1] Nanoelectromechanical Logic and Memory Devices [J].

Akarvardar, Kerem ;

Wong, H. -S. Philip .

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01) :49-59

[2]

Amponsah K., 2010, 5 IEEE INT C NAN MOL, P985

[3]

Boodhoo L, 2013, 2013 8TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE NEMS 2013), P558

[4]

Cao J., 2012, IEEE 25 INT C MICR S, P188

[5]

Chan I. W. T., 1999, IEEE CAN C EL COMP E, P1637

[6]

Colinge JP, 2010, NAT NANOTECHNOL, V5, P225, DOI [10.1038/NNANO.2010.15, 10.1038/nnano.2010.15]

[7] Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires [J].

Feng, X. L. ;

Matheny, M. H. ;

Zorman, C. A. ;

Mehregany, M. ;

Roukes, M. L. .

NANO LETTERS, 2010, 10 (08) :2891-2896

[8]

Ghiass M.A., 2012, 12 IEEE INT C NAN, P1

[9]

Hinchet R., 2011, S DES TEST INT PACK, P348

[10]

ITRS, 2013, EM RES DEV CHAPT

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