Different annealing temperature suitable for different Mg doped P-GaN

被引：8

作者：

Liu, S. T. ^{[1
]}

Yang, J. ^{[1
]}

Zhao, D. G. ^{[1
,2
]}

Jiang, D. S. ^{[1
]}

Liang, F. ^{[1
]}

Chen, P. ^{[1
]}

Zhu, J. J. ^{[1
]}

Liu, Z. S. ^{[1
]}

Li, X. ^{[1
]}

Liu, W. ^{[1
]}

Zhang, L. Q. ^{[3
]}

Long, H. ^{[4
]}

Li, M. ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[4] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 104卷

基金：

中国国家自然科学基金;

关键词：

P-GaN; PL; Hall measurement; PHOTOLUMINESCENCE; LUMINESCENCE; INTERDIFFUSION; GROWTH; ORIGIN;

D O I：

10.1016/j.spmi.2017.02.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：63 / 68

页数：6

共 35 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].