Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

被引：113

作者：

Hsieh, Ting-En ^{[1
]}

Chang, Edward Yi ^{[1
,2
]}

Song, Yi-Zuo ^{[1
]}

Lin, Yueh-Chin ^{[1
]}

Wang, Huan-Chung ^{[1
]}

Liu, Shin-Chien ^{[1
]}

Salahuddin, Sayeef ^{[3
]}

Hu, Chenming Calvin ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 07期

关键词：

GaN; metal-insulator-semiconductor high electron-mobility transistor (MIS-HEMT); normally-OFF; gate recessed; gate insulator; threshold voltage hysteresis; Al2O3 and AlN; plasma enhanced atomic layer deposition (PE-ALD); interfacial passivation layer (IPL);

D O I：

10.1109/LED.2014.2321003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al2O3/AlN stack gate insulator is presented. The trapping effect of Al2O3/GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of similar to 10(9).

引用

页码：732 / 734

页数：3

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