A model of AlN layer formation during ion nitriding of Al

被引：4
作者：
Dimitrov, VI
机构：
[1] Rossendorf Inc, Forschungszentrum, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Fatih Univ Istanbul, TR-34900 Istanbul, Turkey
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 07期
关键词：
D O I：
10.1007/s00339-003-2253-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A diffusion model of AlN layer formation by ion nitriding of Al is proposed based on the analysis of atomic transport during the process. This model is reduced to the following. Implantation of N ions to the surface of the specimen, named the reaction zone; extraction of Al from the substrate; diffusion transport of Al to the reaction zone through an AlN layer formed during the process; formation and growth of AlN in the reaction zone; sputtering of the AlN layer. Equations controlling the growth process have been obtained.
引用
收藏
页码：1829 / 1832
页数：4
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