Temperature-dependent threshold voltage analysis of surrounding/cylindrical gate fully depleted thin film SOI MOSFET in the range 77 to 520 K

被引：6
作者：
Kranti, A
Haldar, S
Gupta, RS
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India
[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 49卷 / 3-4期
关键词：
silicon on insulator MOSFET; double gate MOSFET; surrounding/cylindrical gate MOSFET; short channel effects;
D O I：
10.1016/S0167-9317(99)00446-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Threshold voltage analysis of surrounded gate SOI MOSFET is developed in terms of double gate and cylindrical gate MOSFETs. The temperature dependence of the threshold voltage is then studied using a Gaussian profile in the temperature range 77 to 520 K and the advantages of the surrounding gate over cylindrical and double gate SOI MOSFETs are discussed. The reduced short channel effect and operation over a large temperature range makes the surrounded gate SOI MOSFET a better choice for future VLSI/ULSI application. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：273 / 286
页数：14
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