Over 40 cd/A Efficient Green Quantum Dot Electroluminescent Device Comprising Uniquely Large-Sized Quantum Dots

被引:307
作者
Lee, Ki-Heon [1 ]
Lee, Jeong-Hoon [1 ]
Kang, Hee-Don [1 ]
Park, Byoungnam [1 ]
Kwon, Yongwoo [1 ]
Ko, Heejoo [2 ]
Lee, Changho [2 ]
Lee, Jonghyuk [2 ]
Yang, Heesun [1 ]
机构
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
[2] Samsung Display Co Ltd, Display Res Ctr, Yongin 446811, Kyunggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
quantum dots; electroluminescence; current efficiency; LIGHT-EMITTING-DIODES; CORE-SHELL INTERFACE; INP-AT-ZNSES; HIGHLY EFFICIENT; SEMICONDUCTOR NANOCRYSTALS; COMPOSITION GRADIENT; AUGER RECOMBINATION; BLINKING; BRIGHT; LEDS;
D O I
10.1021/nn500852g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Green CdSe@ZnS quantum dots (QDs) of 9.5 nm size with a composition gradient shell are first prepared by a single-step synthetic approach, and then 12.7 nm CdSe@ZnS/ZnS QDs, the largest among ZnS-shelled visible-emitting QDs available to date, are obtained through the overcoating of an additional 1.6 nm thick ZnS shell. Two QDs of CdSe@ZnS and CdSe@ZnS/ZnS are incorporated into the solution-processed hybrid QD-based light-emitting diode (QLED) structure, where the QD emissive layer (EMI) is sandwiched by poly (9-vinlycarbazole) and ZnO nanoparticles as hole and electron-transport layers, respectively. We find that the presence of an additional ZnS shell makes a profound impact on device performances such as luminance and efficiencies. Compared to CdSe@ZnS QD-based devices the efficiencies of CdSe@ZnS/ZnS QD-based devices are overwhelmingly higher, specifically showing unprecedented values of peak current efficiency of 46.4 cd/A and external quantum efficiency of 12.6%. Such excellent results are likely attributable to a unique structure in CdSe@ZnS/ZnS QDs with a relatively thick ZnS outer shell as well as a well-positioned intermediate alloyed shell, enabling the effective suppression of nonradiative energy transfer between closely packed EMI QDs and Auger recombination at charged QDs.
引用
收藏
页码:4893 / 4901
页数:9
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