Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors

被引：31

作者：

Di Pietro, Riccardo ^{[1
]}

Venkateshvaran, Deepak ^{[2
]}

Klug, Andreas ^{[3
]}

List-Kratochvil, Emil J. W. ^{[3
,4
]}

Facchetti, Antonio ^{[5
]}

Sirringhaus, Henning ^{[2
]}

Neher, Dieter ^{[1
]}

机构：

[1] Univ Potsdam, Inst Phys & Astron, D-14476 Potsdam, Germany

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] NanoTecCtr Weiz Forsch Gesell mbH, A-8160 Weiz, Austria

[4] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[5] Polyera Corp, Skokie, IL 60077 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期

关键词：

SERIES RESISTANCE; POLYMER; TRANSPORT; VOLTAGE; ORIENTATION; ELECTRODES; PARAMETERS; INJECTION; THICKNESS;

D O I：

10.1063/1.4876057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 40 条

[1] Charge Transport in Organic Semiconductors [J].

Baessler, Heinz ;

Koehler, Anna .

UNIMOLECULAR AND SUPRAMOLECULAR ELECTRONICS I: CHEMISTRY AND PHYSICS MEET AT METAL-MOLECULE INTERFACES, 2012, 312 :1-65

[2] A microscopic view of charge transport in polymer transistors [J].

Bürgi, L ;

Richards, T ;

Chiesa, M ;

Friend, RH ;

Sirringhaus, H .

SYNTHETIC METALS, 2004, 146 (03) :297-309

[3] Close look at charge carrier injection in polymer field-effect transistors [J].

Bürgi, L ;

Richards, TJ ;

Friend, RH ;

Sirringhaus, H .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :6129-6137

[4] Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor [J].

Caironi, Mario ;

Bird, Matt ;

Fazzi, Daniele ;

Chen, Zhihua ;

Di Pietro, Riccardo ;

Newman, Christopher ;

Facchetti, Antonio ;

Sirringhaus, Henning .

ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (17) :3371-3381

[5] Top-gate staggered amorphous silicon thin-film transistors: Series resistance and nitride thickness effects [J].

Chiang, CS ;

Martin, S ;

Kanicki, J ;

Ugai, Y ;

Yukawa, T ;

Takeuchi, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11) :5914-5920

[6] Spectroscopic Investigation of Oxygen- and Water-Induced Electron Trapping and Charge Transport Instabilities in n-type Polymer Semiconductors [J].

Di Pietro, Riccardo ;

Fazzi, Daniele ;

Kehoe, Tom B. ;

Sirringhaus, Henning .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (36) :14877-14889

[7] Organic thin-film transistors: A review of recent advances [J].

Dimitrakopoulos, CD ;

Mascaro, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27

[8] Orientation-Dependent Electronic Structures and Charge Transport Mechanisms in Ultrathin Polymeric n-Channel Field-Effect Transistors [J].

Fabiano, Simone ;

Yoshida, Hiroyuki ;

Chen, Zhihua ;

Facchetti, Antonio ;

Loi, Maria Antonietta .

ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (10) :4417-4422

[9] Direct ink-jet printing of Ag-Cu nanoparticle and Ag-precursor based electrodes for OFET applications [J].

Gamerith, Stefan ;

Klug, Andreas ;

Scheiber, Horst ;

Scherf, Ullrich ;

Moderegger, Erik ;

List, Emit J. W. .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (16) :3111-3118

[10] NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS [J].

GHIBAUDO, G .

ELECTRONICS LETTERS, 1988, 24 (09) :543-545

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