Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics

被引：9

作者：

Houshmand, Mohammad ^{[1
]}

Zandi, M. Hossein ^{[1
]}

Gorji, Nima E. ^{[2
]}

机构：

[1] Shahid Bahonar Univ Kerman, Dept Phys, Kerman 75429, Iran

[2] Univ Tabriz, Dept New Technol, Tabriz 51566, Iran

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 88卷

关键词：

Nanotube; CdTe; Thin film; Solar cell; Degradation; NANOTUBES;

D O I：

10.1016/j.spmi.2015.09.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose single walled carbon nanotubes as the n-type window partner of CdTe layer in a conventional CdS/CdTe thin film solar cells. The semiconductor nanotubes have superior optical and electrical properties i.e. controllable high band gap, being highly conductive and non-diffusive (not mobile). We modeled current-voltage characteristics of hybrid SWCNT/CdTe structure using Sah-Noyce-Shockley theory instead of Schottky barrier theory. The former theory is rather strong since it is based on carrier transport in the depletion region of a pn junction and considers the defect density within the depletion width. Also, a time dependent approach is used to simulate the degradation of device metrics under bias, illumination and temperature. It is discussed how a nanolayer can reduce the degradation rate of a thin film solar cell by surpassing grain boundaries and mobile ions migration towards junction. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：365 / 370

页数：6

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