Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method

被引：0
|
作者：
Siebke, F
Stiebig, H
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The defect distributions of amorphous silicon with various doping levels are determined by comparison of measured and simulated constant photocurrent method spectra for the annealed as well as for the degraded state. In both cases the defect distributions are dominated by charged states. The dopant induced changes in the density of localized states are discussed in the context of the defect-pool model.
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页码：351 / 354
页数：4
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